1 www.fairchildsemi.com ?2009 fairchild semiconductor corporation FFPF30UP20ST rev. a1 FFPF30UP20ST 30 a, 200 v, ultrafast diode FFPF30UP20ST features applications ? output rectifiers ? switching mode power supply ? free-wheeling d iode for motor a pplication ? power switching circuits absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v rwm working peak reverse voltage 200 v v r dc blocking voltage 200 v i f(av) average rectified forward current @ t c = 85 c3 0 a i fsm non-repetitive peak surge current 60hz single half-sine wave 300 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 3.0 c/w device marking device package reel size tape width quantity f30up20st FFPF30UP20STtu to-220f -- 50 1. cathode 2. anode 1 to-220f 12 1. cathode 2. anode tm february 2009 30 a, 200 v, ultrafast diode the FFPF30UP20ST is a ultrafast diode with low forward voltage drop. this dev ice is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. it is specially suited for use in switc hing power supplies and industrial application. ? ultrafast recovery t rr = 50 ns (@ i f = 30 a) ? max forward voltage, v f = 1.15 v (@ t c = 25c) ? reverse voltage, v rrm = 200 v ? avalanche energy rated ? rohs compliant
2 www.fairchildsemi.com FFPF30UP20ST 30 a, 200 v, ultrafast diode electrical characteristics t c = 25c unless otherwise noted * p ulse tes t: p uls e w idth=300 s, duty cycle = 2% test circuit and waveforms symbol parameter min. typ. max. unit v f * i f = 30 a i f = 30 a t c = 25 c t c = 100 c - - - - 1.15 1.0 v v i r * v r = 200 v v r = 200 v t c = 25 c t c = 100 c - - - - 100 500 a a t rr i f = 1 a, di/d t = 100 a/s, v cc = 30 v i f = 30 a, di/d t = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c - - - - 40 50 ns ns t a t b q rr i f = 30 a, di/d t = 200 a/s, v cc = 130 v t c = 25 c t c = 25 c t c = 25 c - - - 22 14 67 - - - ns ns nc w avl avalanche energy (l = 40 mh) 20 - - mj ?2009 fairchild semiconduc tor corporation FFPF30UP20ST rev. a1
3 www.fairchildsemi.com FFPF30UP20ST 30 a, 200 v, ultrafast diode typical performance characteristics figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 t c = 100 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 0 50 100 150 200 1e-3 0.01 0.1 1 10 t c = 125 o c t c = 100 o c t c = 75 o c reverse current, i r [ua] reverse voltage, v r [v] t c = 25 o c 0.1 1 10 100 0 100 200 300 400 500 600 junction capacitance, c j [pf] reverse voltage, v r [v] f = 1mhz 100 200 300 400 500 25 30 35 40 45 50 55 60 65 70 t c = 125 o c t c = 75 o c reverse recovery time, trr [ns] di/dt, [a/ s] t c = 25 o c i f = 30a 100 200 300 400 500 0 2 4 6 8 10 12 14 16 18 20 t c = 125 o c t c = 75 o c reverse recovery current, irr [a] di/dt, [a/ s] t c = 25 o c i f = 30a 60 70 80 90 100 110 120 130 140 150 0 5 10 15 20 25 30 35 40 average forward current, i f(av) [a] case temperature, t c [ o c] dc ?2009 fairchild semiconduc tor corporation FFPF30UP20ST rev. a1
mechanical dimensions dimensions in millimeters to-220f 2l potting type 4 www.fairchildsemi.com FFPF30UP20ST 30 a, 200 v, ultrafast diode ?2009 fairchild semiconduc tor corporation FFPF30UP20ST rev. a1
5 www.fairchildsemi.com FFPF30UP20ST 30 a, 200 v, ultrafast diode ?2009 fairc hild semiconduc tor corporation FFPF30UP20ST rev. a1
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